Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ24PBF IRLZ24PBF

Description
Manufacturer: Vishay Win Source Part Number: 1047696-IRLZ24PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 18nC @ 5V Max Input Capacitance: 870pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ24PBF - 1047696-IRLZ24PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRLZ24PBF-ND - DigiKey
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  • N Channel Mosfet, 60V, 17A, To-220; Transistor Polarity Vishay - 19K8392 - Newark, An Avnet Company
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  • Mosfet Transistor, N Channel, 17 A, 60 V, 100 Mohm, 5 V, 2 V Rohs Compliant Vishay - 97K2376 - Newark, An Avnet Company
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  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLZ24PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 16357621 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1047696-IRLZ24PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 18nC @ 5V Max Input Capacitance: 870pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ24PBF - 1047696-IRLZ24PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ24PBF
1047696-IRLZ24PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ24PBF 1047696-IRLZ24PBF
Manufacturer: Vishay Win Source Part Number: 1047696-IRLZ24PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 18nC @ 5V Max Input Capacitance: 870pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 1047696-IRLZ24PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 18nC @ 5V
Max Input Capacitance: 870pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - IRLZ24PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLZ24PBF-ND
Single FETs, MOSFETs IRLZ24PBF-ND
N-Channel 60V 17A (Tc) 60W (Tc) Through Hole TO-220AB

N-Channel 60V 17A (Tc) 60W (Tc) Through Hole TO-220AB

Buy Now Datasheet
N Channel Mosfet, 60V, 17A, To-220; Transistor Polarity Vishay - 19K8392 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 17A, To-220; Transistor Polarity Vishay
19K8392
N Channel Mosfet, 60V, 17A, To-220; Transistor Polarity Vishay 19K8392
N CHANNEL MOSFET, 60V, 17A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:17A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:5V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 17A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:17A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:5V; MSL:- RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 17 A, 60 V, 100 Mohm, 5 V, 2 V Rohs Compliant Vishay - 97K2376 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 17 A, 60 V, 100 Mohm, 5 V, 2 V Rohs Compliant Vishay
97K2376
Mosfet Transistor, N Channel, 17 A, 60 V, 100 Mohm, 5 V, 2 V Rohs Compliant Vishay 97K2376
MOSFET Transistor, N Channel, 17 A, 60 V, 100 mohm, 5 V, 2 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 17 A, 60 V, 100 mohm, 5 V, 2 V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRLZ24PBF
MOSFET IRLZ24PBF
MOSFET N-CH 60V HEXFET MOSFET

MOSFET N-CH 60V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLZ24PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLZ24PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLZ24PBF
MOSFET N-CH 60V 17A TO220AB

MOSFET N-CH 60V 17A TO220AB

Supplier's Site
Transistor - 16357621 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16357621
Transistor 16357621
N CHANNEL MOSFET, 60V, 17A, TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:17A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.1OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; NO. OF PINS:3PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 60V, 17A, TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:17A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.1OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; NO. OF PINS:3PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 1047696-IRLZ24PBF IRLZ24PBF-ND 19K8392 97K2376 IRLZ24PBF IRLZ24PBF 16357621
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ24PBF Single FETs, MOSFETs N Channel Mosfet, 60V, 17A, To-220; Transistor Polarity Vishay Mosfet Transistor, N Channel, 17 A, 60 V, 100 Mohm, 5 V, 2 V Rohs Compliant Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 60000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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