Vishay Intertechnology, Inc. Single FETs, MOSFETs IRLU110

Description
MOSFET N-CH 100V 4.3A TO251AA
Request a Quote Datasheet
Description
MOSFET N-CH 100V 4.3A TO251AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRLU110-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLU110-ND
Single FETs, MOSFETs IRLU110-ND
MOSFET N-CH 100V 4.3A TO251AA

MOSFET N-CH 100V 4.3A TO251AA

Buy Now Datasheet
FETs - Single - IRLU110 - 1188660-IRLU110 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRLU110
1188660-IRLU110
FETs - Single - IRLU110 1188660-IRLU110
Manufacturer: Vishay Siliconix Win Source Part Number: 1188660-IRLU110 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-251AA Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.vishay.com Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 2.5W, 25W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 75 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 4.3A Rds On (Maximum) at Id, Vgs: 540mOhm at 2.6A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 6.1nC at 5V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188660-IRLU110
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.vishay.com
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 2.5W, 25W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 75
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 4.3A
Rds On (Maximum) at Id, Vgs: 540mOhm at 2.6A, 5V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 6.1nC at 5V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 25V

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Sheung Wan, Hong Kong
MOSFET
IRLU110
MOSFET IRLU110
MOSFET RECOMMENDED ALT 844-IRLU110PBF

MOSFET RECOMMENDED ALT 844-IRLU110PBF

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLU110 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLU110
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLU110
MOSFET N-CH 100V 4.3A TO251AA

MOSFET N-CH 100V 4.3A TO251AA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRLU110-ND 1188660-IRLU110 IRLU110 IRLU110
Product Name Single FETs, MOSFETs FETs - Single - IRLU110 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3 TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 100 volts
QG 6.1 nC
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