Vishay Intertechnology, Inc. Single FETs, MOSFETs IRLR110

Description
MOSFET N-CH 100V 4.3A DPAK
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Description
MOSFET N-CH 100V 4.3A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRLR110-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLR110-ND
Single FETs, MOSFETs IRLR110-ND
MOSFET N-CH 100V 4.3A DPAK

MOSFET N-CH 100V 4.3A DPAK

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FETs - Single - IRLR110 - 1188609-IRLR110 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRLR110
1188609-IRLR110
FETs - Single - IRLR110 1188609-IRLR110
Manufacturer: Vishay Siliconix Win Source Part Number: 1188609-IRLR110 Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D-Pak Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 2.5W, 25W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 4.3A Rds On (Maximum) at Id, Vgs: 540mOhm at 2.6A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 6.1nC at 5V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188609-IRLR110
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 2.5W, 25W
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 4.3A
Rds On (Maximum) at Id, Vgs: 540mOhm at 2.6A, 5V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 6.1nC at 5V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLR110 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLR110
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLR110
MOSFET N-CH 100V 4.3A DPAK

MOSFET N-CH 100V 4.3A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
IRLR110
MOSFET IRLR110
MOSFET RECOMMENDED ALT 844-IRLR110PBF

MOSFET RECOMMENDED ALT 844-IRLR110PBF

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRLR110-ND 1188609-IRLR110 IRLR110 IRLR110
Product Name Single FETs, MOSFETs FETs - Single - IRLR110 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 100 volts
QG 6.1 nC
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