Vishay Intertechnology, Inc. Single FETs, MOSFETs IRLL110TR

Description
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Request a Quote Datasheet
Description
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRLL110TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLL110TR-ND
Single FETs, MOSFETs IRLL110TR-ND
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Buy Now Datasheet
FETs - Single - IRLL110TR - 1188570-IRLL110TR - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRLL110TR
1188570-IRLL110TR
FETs - Single - IRLL110TR 1188570-IRLL110TR
Manufacturer: Vishay Siliconix Win Source Part Number: 1188570-IRLL110TR Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.vishay.com Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 2W, 3.1W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 1.5A Rds On (Maximum) at Id, Vgs: 540mOhm at 900mA, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 6.1nC at 5V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188570-IRLL110TR
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.vishay.com
Manufacturer Package: TO-261-4, TO-261AA
Power Dissipation (Maximum): 2W, 3.1W
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 1.5A
Rds On (Maximum) at Id, Vgs: 540mOhm at 900mA, 5V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 6.1nC at 5V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 25V

Buy Now
MOSFET N-CH 100V 1.5A SOT223 - 880-IRLL110TR - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 1.5A SOT223
880-IRLL110TR
MOSFET N-CH 100V 1.5A SOT223 880-IRLL110TR
MOSFET N-CH 100V 1.5A SOT223

MOSFET N-CH 100V 1.5A SOT223

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRLL110TR-ND 1188570-IRLL110TR 880-IRLL110TR
Product Name Single FETs, MOSFETs FETs - Single - IRLL110TR MOSFET N-CH 100V 1.5A SOT223
Polarity N-Channel N-Channel; N-Channel
Package Type SOT223; TO-261-4, TO-261AA SOT3
V(BR)DSS 100 volts 100 volts
QG 6.1 nC
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