Vishay Intertechnology, Inc. Single FETs, MOSFETs IRLIZ14G

Description
N-Channel 60V 8A (Tc) 27W (Tc) Through Hole TO-220-3
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Description
N-Channel 60V 8A (Tc) 27W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRLIZ14G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLIZ14G-ND
Single FETs, MOSFETs IRLIZ14G-ND
N-Channel 60V 8A (Tc) 27W (Tc) Through Hole TO-220-3

N-Channel 60V 8A (Tc) 27W (Tc) Through Hole TO-220-3

Buy Now Datasheet
FETs - Single - IRLIZ14G - 1188559-IRLIZ14G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRLIZ14G
1188559-IRLIZ14G
FETs - Single - IRLIZ14G 1188559-IRLIZ14G
Manufacturer: Vishay Siliconix Win Source Part Number: 1188559-IRLIZ14G Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 27W Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 8A Rds On (Maximum) at Id, Vgs: 200mOhm at 4.8A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.4nC at 5V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 400pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188559-IRLIZ14G
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 27W
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 8A
Rds On (Maximum) at Id, Vgs: 200mOhm at 4.8A, 5V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.4nC at 5V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 400pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLIZ14G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLIZ14G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLIZ14G
MOSFET N-CH 60V 8A TO220-3

MOSFET N-CH 60V 8A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number IRLIZ14G-ND 1188559-IRLIZ14G IRLIZ14G
Product Name Single FETs, MOSFETs FETs - Single - IRLIZ14G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3 TO-220; TO-220-3 Full Pack, Isolated Tab
V(BR)DSS 60 volts
QG 8.4 nC
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