Vishay Intertechnology, Inc. Single FETs, MOSFETs IRLI630G

Description
N-Channel 200V 6.2A (Tc) 35W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 200V 6.2A (Tc) 35W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRLI630G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLI630G-ND
Single FETs, MOSFETs IRLI630G-ND
N-Channel 200V 6.2A (Tc) 35W (Tc) Through Hole TO-220-3

N-Channel 200V 6.2A (Tc) 35W (Tc) Through Hole TO-220-3

Buy Now Datasheet
FETs - Single - IRLI630G - 1188555-IRLI630G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRLI630G
1188555-IRLI630G
FETs - Single - IRLI630G 1188555-IRLI630G
Manufacturer: Vishay Siliconix Win Source Part Number: 1188555-IRLI630G Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 35W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 6.2A Rds On (Maximum) at Id, Vgs: 400mOhm at 3.7A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 40nC at 10V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 1100pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188555-IRLI630G
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 35W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 6.2A
Rds On (Maximum) at Id, Vgs: 400mOhm at 3.7A, 5V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 40nC at 10V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 1100pF at 25V

Buy Now
Singapore
200V 6.2A TO220 MOSFET Transistor
278-IRLI630G
200V 6.2A TO220 MOSFET Transistor 278-IRLI630G
MOSFET N-CH 200V 6.2A TO220-3 Product overview: IRLI630G from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 6.2A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 6.2A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLI630G can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 6.2A TO220-3 Product overview: IRLI630G from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 6.2A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 6.2A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLI630G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLI630G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLI630G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLI630G
MOSFET N-CH 200V 6.2A TO220-3

MOSFET N-CH 200V 6.2A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRLI630G-ND 1188555-IRLI630G 278-IRLI630G IRLI630G
Product Name Single FETs, MOSFETs FETs - Single - IRLI630G 200V 6.2A TO220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3 Tube TO-220; TO-220-3 Full Pack, Isolated Tab
V(BR)DSS 200 volts
QG 40 nC
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