Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD110PBF IRLD110PBF

Description
Manufacturer: Vishay Win Source Part Number: 123914-IRLD110PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 600mA, 5V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD110PBF - 123914-IRLD110PBF - Win Source Electronics
    Win Source Electronics
  • Transistor - 16357461 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - IRLD110PBF-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 100V, 1A, 175Deg C, 1.3W; Channel Type Vishay - 97K2344 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4 - 880-IRLD110PBF - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLD110PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-10V;VF 2. - 70078982 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 123914-IRLD110PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 600mA, 5V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD110PBF - 123914-IRLD110PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD110PBF
123914-IRLD110PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD110PBF 123914-IRLD110PBF
Manufacturer: Vishay Win Source Part Number: 123914-IRLD110PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 600mA, 5V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 123914-IRLD110PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.1nC @ 5V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 540 mOhm @ 600mA, 5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 16357461 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16357461
Transistor 16357461
TRANSISTOR, POWER MOSFET, N CHANNEL, 100V, 1 AMP, 0.54 OHM, DIP, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, POWER MOSFET, N CHANNEL, 100V, 1 AMP, 0.54 OHM, DIP, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRLD110PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLD110PBF-ND
Single FETs, MOSFETs IRLD110PBF-ND
N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
Mosfet, N-Ch, 100V, 1A, 175Deg C, 1.3W; Channel Type Vishay - 97K2344 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 1A, 175Deg C, 1.3W; Channel Type Vishay
97K2344
Mosfet, N-Ch, 100V, 1A, 175Deg C, 1.3W; Channel Type Vishay 97K2344
MOSFET, N-CH, 100V, 1A, 175DEG C, 1.3W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 1A, 175DEG C, 1.3W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site
Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4 - 880-IRLD110PBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4
880-IRLD110PBF
Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4 880-IRLD110PBF
Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4

Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLD110PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLD110PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLD110PBF
MOSFET N-CH 100V 1A 4DIP

MOSFET N-CH 100V 1A 4DIP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRLD110PBF
MOSFET IRLD110PBF
MOSFET N-CH 100V HEXFET MOSFET HEXDI

MOSFET N-CH 100V HEXFET MOSFET HEXDI

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-10V;VF 2. - 70078982 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-10V;VF 2.
70078982
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-10V;VF 2. 70078982
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-10V;VF 2.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-10V;VF 2.

Supplier's Site

Technical Specifications

  Win Source Electronics Radwell International DigiKey Newark, An Avnet Company Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 123914-IRLD110PBF 16357461 IRLD110PBF-ND 97K2344 880-IRLD110PBF IRLD110PBF IRLD110PBF 70078982
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD110PBF Transistor Single FETs, MOSFETs Mosfet, N-Ch, 100V, 1A, 175Deg C, 1.3W; Channel Type Vishay Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-10V;VF 2.
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts 100 volts
PD 1300 milliwatts 1300 milliwatts 1300 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; 4-DIP, Hexdip, HVMDIP "4-DIP (0.300"", 7.62mm)" TO-3 4-DIP (0.300, 7.62mm) HD-1
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