N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
N-Channel JFET, 100V, 1A, 540mR Rds(on), DIP Product overview: IRLD110PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 1A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1A, DIP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLD110PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 123914-IRLD110PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.1nC @ 5V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 540 mOhm @ 600mA, 5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V HEXFET MOSFET HEXDI
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-10V;VF 2.
TRANSISTOR, POWER MOSFET, N CHANNEL, 100V, 1 AMP, 0.54 OHM, DIP, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 1A 4DIP
Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4
MOSFET, N-CH, 100V, 1A, 175DEG C, 1.3W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRLD110PBF-ND | 278-IRLD110PBF | 123914-IRLD110PBF | IRLD110PBF | 70078982 | 16357461 | IRLD110PBF | 880-IRLD110PBF | 97K2344 |
| Product Name | Single FETs, MOSFETs | N-Channel 100V 1A DIP MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD110PBF | MOSFET | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-10V;VF 2. | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4 | Mosfet, N-Ch, 100V, 1A, 175Deg C, 1.3W; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Package Type | "4-DIP (0.300"", 7.62mm)" | SOT3; 4-DIP, Hexdip, HVMDIP | HD-1 | 4-DIP (0.300, 7.62mm) | TO-3 | ||||
| PD | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts |
