Vishay Intertechnology, Inc. 100V 1A MOSFET Transistor IRLD110

MOSFET N-CH 100V 1A 4DIP Product overview: IRLD110 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLD110 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188532-IRLD110
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 4-DIP
Power Dissipation (Maximum): 1.3W
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 1A
Rds On (Maximum) at Id, Vgs: 540mOhm at 600mA, 5V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 6.1nC at 5V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 25V

N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP