200V 17A N-Channel MOSFET, 180mR Rds On, D2PAK Product overview: IRL640SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL640SPBF can be used for catalog matching and distributor lookup.
N-Channel 200V 17A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Vishay Siliconix
Win Source Part Number: 1188525-IRL640SPBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.1W, 125W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 17A
Rds On (Maximum) at Id, Vgs: 180mOhm at 10A, 5V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 66nC at 5V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 1800pF at 25V
MOSFET N-CH 200V 17A D2PAK
MOSFET Transistor, N Channel, 17 A, 200 V, 180 mohm, 5 V, 2 V RoHS Compliant: Yes
Trans MOSFET N-CH 200V 17A 3-Pin(2+Tab) D2PAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRL640SPBF | IRL640SPBF-ND | 5430456 | 5430456P | 1188525-IRL640SPBF | IRL640SPBF | 38K3083 | 880-IRL640SPBF | IRL640SPBF |
| Product Name | N-Channel 200V 17A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | FETs - Single - IRL640SPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 17 A, 200 V, 180 Mohm, 5 V, 2 V Rohs Compliant Vishay | Trans MOSFET N-CH 200V 17A 3-Pin(2+Tab) D2PAK | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 3100 milliwatts | 3100 to 125000 milliwatts | 3100 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; D2pak (to-263) | TO-263; TO-263 | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | |||
| MOSFET Operating Mode | Enhancement |
