Vishay Intertechnology, Inc. FETs - Single - IRL630S IRL630S

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188521-IRL630S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.1W, 74W Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 400mOhm at 5.4A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 40nC at 10V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 1100pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188521-IRL630S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.1W, 74W Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 400mOhm at 5.4A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 40nC at 10V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 1100pF at 25V
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Suppliers

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FETs - Single - IRL630S - 1188521-IRL630S - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRL630S
1188521-IRL630S
FETs - Single - IRL630S 1188521-IRL630S
Manufacturer: Vishay Siliconix Win Source Part Number: 1188521-IRL630S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.1W, 74W Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 400mOhm at 5.4A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 40nC at 10V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 1100pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188521-IRL630S
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.1W, 74W
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 9A
Rds On (Maximum) at Id, Vgs: 400mOhm at 5.4A, 5V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 40nC at 10V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 1100pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL630S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL630S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL630S
MOSFET N-CH 200V 9A D2PAK

MOSFET N-CH 200V 9A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET RF Transistors
Product Number 1188521-IRL630S IRL630S
Product Name FETs - Single - IRL630S Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
QG 40 nC
PD 3100 to 74000 milliwatts
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