Vishay Intertechnology, Inc. FETs - Single - IRL620S IRL620S

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188518-IRL620S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.1W, 50W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 5.2A Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 16nC at 5V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 360pF at 25V
Request a Quote Datasheet
Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188518-IRL620S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.1W, 50W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 5.2A Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 16nC at 5V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 360pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRL620S - 1188518-IRL620S - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRL620S
1188518-IRL620S
FETs - Single - IRL620S 1188518-IRL620S
Manufacturer: Vishay Siliconix Win Source Part Number: 1188518-IRL620S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.1W, 50W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 5.2A Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 16nC at 5V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 360pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188518-IRL620S
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.1W, 50W
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 5.2A
Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 16nC at 5V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 360pF at 25V

Buy Now
Single FETs, MOSFETs - IRL620S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL620S-ND
Single FETs, MOSFETs IRL620S-ND
N-Channel 200V 5.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 5.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL620S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL620S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL620S
MOSFET N-CH 200V 5.2A D2PAK

MOSFET N-CH 200V 5.2A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors RF Transistors
Product Number 1188518-IRL620S IRL620S-ND IRL620S
Product Name FETs - Single - IRL620S Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
QG 16 nC
PD 3100 to 50000 milliwatts
Unlock Full Specs
to access all available technical data