Vishay Intertechnology, Inc. FETs - Single - IRL620 IRL620

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188517-IRL620 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 5.2A Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 16nC at 5V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 360pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188517-IRL620 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 5.2A Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 16nC at 5V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 360pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRL620 - 1188517-IRL620 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRL620
1188517-IRL620
FETs - Single - IRL620 1188517-IRL620
Manufacturer: Vishay Siliconix Win Source Part Number: 1188517-IRL620 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 5.2A Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 16nC at 5V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 360pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188517-IRL620
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 50W
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 5.2A
Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 5V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 16nC at 5V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 360pF at 25V

Buy Now
Single FETs, MOSFETs - IRL620-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL620-ND
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N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB

N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Integrated Circuits (ICs) - Transistors - MOSFETs - IRL620 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - MOSFETs
IRL620
Integrated Circuits (ICs) - Transistors - MOSFETs IRL620
Integrated Circuits (ICs) - Transistors - MOSFETs

Integrated Circuits (ICs) - Transistors - MOSFETs

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors RF Transistors
Product Number 1188517-IRL620 IRL620-ND IRL620
Product Name FETs - Single - IRL620 Single FETs, MOSFETs Integrated Circuits (ICs) - Transistors - MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
QG 16 nC
PD 50000 milliwatts
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