Manufacturer: Vishay Siliconix
Win Source Part Number: 1188503-IRL520
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 60W
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 9.2A
Rds On (Maximum) at Id, Vgs: 270mOhm at 5.5A, 5V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 12nC at 5V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 490pF at 25V
N-Channel 100V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB
MOSFET N-CH 100V 9.2A TO-220AB
MOSFET N-CH 100V 9.2A TO220AB
| Win Source Electronics | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1188503-IRL520 | IRL520-ND | 880-IRL520 | IRL520 |
| Product Name | FETs - Single - IRL520 | Single FETs, MOSFETs | MOSFET N-CH 100V 9.2A TO-220AB | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | 100 volts | ||
| QG | 12 nC | |||
| PD | 60000 milliwatts | 60000 milliwatts |
