Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510STRR IRL510STRR

Description
Manufacturer: Vishay Win Source Part Number: 1047499-IRL510STRR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Quantity per package: 800
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Description
Manufacturer: Vishay Win Source Part Number: 1047499-IRL510STRR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Quantity per package: 800
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510STRR - 1047499-IRL510STRR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510STRR
1047499-IRL510STRR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510STRR 1047499-IRL510STRR
Manufacturer: Vishay Win Source Part Number: 1047499-IRL510STRR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Vishay
Win Source Part Number: 1047499-IRL510STRR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.1nC @ 5V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Singapore
100V 5.6A MOSFET Transistor
285-IRL510STRR
100V 5.6A MOSFET Transistor 285-IRL510STRR
MOSFET N-CH 100V 5.6A D2PAK Product overview: IRL510STRR from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRL510STRR can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 5.6A D2PAK Product overview: IRL510STRR from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRL510STRR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047499-IRL510STRR 285-IRL510STRR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510STRR 100V 5.6A MOSFET Transistor
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 3700 to 43000 milliwatts 43000 milliwatts
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