Vishay Intertechnology, Inc. Single FETs, MOSFETs IRL510SPBF

Description
N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRL510SPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL510SPBF-ND
Single FETs, MOSFETs IRL510SPBF-ND
N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510SPBF - 1047497-IRL510SPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510SPBF
1047497-IRL510SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510SPBF 1047497-IRL510SPBF
Manufacturer: Vishay Win Source Part Number: 1047497-IRL510SPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Vishay
Win Source Part Number: 1047497-IRL510SPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.1nC @ 5V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 5V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
MOSFET N-CH 100V 5.6A D2PAK - 880-IRL510SPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 5.6A D2PAK
880-IRL510SPBF
MOSFET N-CH 100V 5.6A D2PAK 880-IRL510SPBF
MOSFET N-CH 100V 5.6A D2PAK

MOSFET N-CH 100V 5.6A D2PAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL510SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL510SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL510SPBF
MOSFET N-CH 100V 5.6A D2PAK

MOSFET N-CH 100V 5.6A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRL510SPBF-ND 1047497-IRL510SPBF 880-IRL510SPBF IRL510SPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510SPBF MOSFET N-CH 100V 5.6A D2PAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK -55degC ~ 175degC (TJ)
V(BR)DSS 100 volts 100 volts
PD 3700 to 43000 milliwatts 3700 milliwatts
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