The IRFZ40PBF is a silicon N-channel MOSFET in a TO-220AB package, designed for high-efficiency switching applications with a drain-source voltage rating of 60 V and a continuous drain current of 50 A at 25 °C. It features a maximum on-resistance of 0.028 Ω at 10 V gate-source voltage, a peak pulsed drain current of 200 A, and an operating junction temperature range from -55 °C to +175 °C. The device complies with RoHS Directive 2002/95/EC and has a typical gate charge of 67 nC. Thermal resistance from junction to case is 1.0 °C/W, and junction-to-ambient is 62 °C/W.
N CHANNEL MOSFET, 50V, 35A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:35A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC0569 |
| Product Name | N Channel Mosfet, 50V, 35A, To-220; Channel Type Vishay |
| Polarity | N-Channel |