P channel ;VBRDSS -200 V; RDSon 1500 m
P channel ;VBRDSS -200 V; RDSon 1500 m
P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
P-CH MOSFET 200V 3.6A 1.5R TO-251-3 Product overview: IRFU9220PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU9220PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 040763-IRFU9220PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 340pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
MOSFET P-CH -200V HEXFET MOSFET I-PAK
P CHANNEL MOSFET, -200V, 3.6A, IPAK; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET P-CH 200V 3.6A TO251AA
| RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1808722 | IRFU9220PBF-ND | 278-IRFU9220PBF | 040763-IRFU9220PBF | IRFU9220PBF | 63J7106 | IRFU9220PBF |
| Product Name | MOSFETs | Single FETs, MOSFETs | 200V 3.6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9220PBF | MOSFET | P Channel Mosfet, -200V, 3.6A, Ipak; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; TO-251AA | TO-3 | TO-251-3 Short Leads, IPak, TO-251AA | |||
| PD | 2500 milliwatts | 2500 to 42000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
