Vishay Intertechnology, Inc. FETs - Single - IRFU9120 IRFU9120

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188125-IRFU9120 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-251AA Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.intersil.com/cda /home Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 2.5W, 42W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 75 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 5.6A Rds On (Maximum) at Id, Vgs: 600mOhm at 3.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 18nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 390pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188125-IRFU9120 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-251AA Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.intersil.com/cda /home Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 2.5W, 42W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 75 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 5.6A Rds On (Maximum) at Id, Vgs: 600mOhm at 3.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 18nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 390pF at 25V
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Suppliers

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FETs - Single - IRFU9120 - 1188125-IRFU9120 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFU9120
1188125-IRFU9120
FETs - Single - IRFU9120 1188125-IRFU9120
Manufacturer: Vishay Siliconix Win Source Part Number: 1188125-IRFU9120 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-251AA Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.intersil.com/cda /home Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 2.5W, 42W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 75 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 5.6A Rds On (Maximum) at Id, Vgs: 600mOhm at 3.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 18nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 390pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188125-IRFU9120
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.intersil.com/cda/home
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 2.5W, 42W
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 75
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 5.6A
Rds On (Maximum) at Id, Vgs: 600mOhm at 3.4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 18nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 390pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU9120 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFU9120
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFU9120
MOSFET P-CH 100V 5.6A TO251AA

MOSFET P-CH 100V 5.6A TO251AA

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET RF Transistors
Product Number 1188125-IRFU9120 IRFU9120
Product Name FETs - Single - IRFU9120 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 100 volts
QG 18 nC
PD 2500 to 42000 milliwatts
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