P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA
Manufacturer: Vishay
Win Source Part Number: 001975-IRFU9014PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
P-CH MOSFET 60V 5.1A 500mR TO-251AA Product overview: IRFU9014PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU9014PBF can be used for catalog matching and distributor lookup.
MOSFET Transistor, P Channel, 5.6 A, 60 V, 500 mohm, -10 V, -4 V RoHS Compliant: Yes
MOSFET P-CH 60V 5.1A TO251AA
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.5Ohm;ID -5.1A;TO-251AA;PD 2.5W;VGS +/-20V
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFU9014PBF-ND | 001975-IRFU9014PBF | 278-IRFU9014PBF | 38K2693 | IRFU9014PBF | IRFU9014PBF | 70078971 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9014PBF | 60V 5.1A MOSFET Transistor | Mosfet Transistor, P Channel, 5.6 A, 60 V, 500 Mohm, -10 V, -4 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.5Ohm;ID -5.1A;TO-251AA;PD 2.5W;VGS +/-20V |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; TO-251AA | TO-3 | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | ||
| V(BR)DSS | 60 volts | -60 volts | |||||
| PD | 2500 to 25000 milliwatts | 2500 milliwatts | 2500 milliwatts |
