Vishay Precision Group Single FETs, MOSFETs IRFU224PBF

Description
N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
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Description
N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFU224PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU224PBF-ND
Single FETs, MOSFETs IRFU224PBF-ND
N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

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FETs - Single - IRFU224PBF - 1188074-IRFU224PBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFU224PBF
1188074-IRFU224PBF
FETs - Single - IRFU224PBF 1188074-IRFU224PBF
Manufacturer: Vishay Siliconix Win Source Part Number: 1188074-IRFU224PBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-251AA Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 2.5W, 42W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 250V Id - Continuous Drain Current: 3.8A Rds On (Maximum) at Id, Vgs: 1.1Ohm at 2.3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 260pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188074-IRFU224PBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 2.5W, 42W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 250V
Id - Continuous Drain Current: 3.8A
Rds On (Maximum) at Id, Vgs: 1.1Ohm at 2.3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 260pF at 25V

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Sheung Wan, Hong Kong
MOSFET N-CH 250V HEXFET MOSFET I-PAK

MOSFET N-CH 250V HEXFET MOSFET I-PAK

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU224PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFU224PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFU224PBF
MOSFET N-CH 250V 3.8A TO251AA

MOSFET N-CH 250V 3.8A TO251AA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFU224PBF-ND 1188074-IRFU224PBF IRFU224PBF IRFU224PBF
Product Name Single FETs, MOSFETs FETs - Single - IRFU224PBF MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3 TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 250 volts
QG 14 nC
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