Manufacturer: Vishay Siliconix
Win Source Part Number: 1187873-IRFR210TRL
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.vishay.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 2.5W, 25W
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 2.6A
Rds On (Maximum) at Id, Vgs: 1.5Ohm at 1.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V
200V 2.6A N-Channel MOSFET, 1.5R Rds On, TO-252 Product overview: IRFR210TRL from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 2.6A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2.6A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR210TRL can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1187873-IRFR210TRL | 278-IRFR210TRL |
| Product Name | FETs - Single - IRFR210TRL | N-Channel 200V 2.6A TO-252 MOSFET Transistor |
| Polarity | N-Channel; N-Channel | N-Channel |
| V(BR)DSS | 200 volts | |
| QG | 8.2 nC | |
| PD | 2500 to 25000 milliwatts | 25000 milliwatts |