Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210PBF IRFR210PBF

Description
Manufacturer: Vishay Win Source Part Number: 1047027-IRFR210PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 140pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210PBF - 1047027-IRFR210PBF - Win Source Electronics
    Win Source Electronics
  • MOSFETs - 1808713 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1808342 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - IRFR210PBF-ND - DigiKey
    DigiKey
  • MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V - 70078958 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Mosfet, N-Ch, 200V, 2.6A, 150Deg C, 25W; Channel Type Vishay - 38K2607 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR210PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1047027-IRFR210PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 140pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210PBF - 1047027-IRFR210PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210PBF
1047027-IRFR210PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210PBF 1047027-IRFR210PBF
Manufacturer: Vishay Win Source Part Number: 1047027-IRFR210PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 140pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1047027-IRFR210PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 140pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 1808713 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808713
MOSFETs 1808713
N channel ;VBRDSS 200 V; RDSon 1500 mO

N channel ;VBRDSS 200 V; RDSon 1500 mO

Supplier's Site
MOSFETs - 1808342 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808342
MOSFETs 1808342
N channel ;VBRDSS 200 V; RDSon 1500 mO

N channel ;VBRDSS 200 V; RDSon 1500 mO

Supplier's Site
Single FETs, MOSFETs - IRFR210PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR210PBF-ND
Single FETs, MOSFETs IRFR210PBF-ND
N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V - 70078958 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V
70078958
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V 70078958
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V

Supplier's Site
Mosfet, N-Ch, 200V, 2.6A, 150Deg C, 25W; Channel Type Vishay - 38K2607 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 2.6A, 150Deg C, 25W; Channel Type Vishay
38K2607
Mosfet, N-Ch, 200V, 2.6A, 150Deg C, 25W; Channel Type Vishay 38K2607
MOSFET, N-CH, 200V, 2.6A, 150DEG C, 25W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 200V, 2.6A, 150DEG C, 25W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR210PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR210PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR210PBF
MOSFET N-CH 200V 2.6A DPAK

MOSFET N-CH 200V 2.6A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey Allied Electronics, Inc. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1047027-IRFR210PBF 1808713 IRFR210PBF-ND 70078958 38K2607 IRFR210PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210PBF MOSFETs Single FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V Mosfet, N-Ch, 200V, 2.6A, 150Deg C, 25W; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 200 volts 200 volts
PD 2500 to 25000 milliwatts 25000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252AA TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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