Vishay Intertechnology, Inc. MOSFETs IRFR210PBF

Description
N channel ;VBRDSS 200 V; RDSon 1500 mO
Request a Quote Datasheet
Description
N channel ;VBRDSS 200 V; RDSon 1500 mO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 1808713 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808713
MOSFETs 1808713
N channel ;VBRDSS 200 V; RDSon 1500 mO

N channel ;VBRDSS 200 V; RDSon 1500 mO

Supplier's Site
MOSFETs - 1808342 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808342
MOSFETs 1808342
N channel ;VBRDSS 200 V; RDSon 1500 mO

N channel ;VBRDSS 200 V; RDSon 1500 mO

Supplier's Site
Singapore
N-Channel 200V 2.6A DPAK MOSFET Transistor
278-IRFR210PBF
N-Channel 200V 2.6A DPAK MOSFET Transistor 278-IRFR210PBF
N-Channel MOSFET, 200V, 2.6A, 1.5R RdsOn, DPAK Product overview: IRFR210PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 2.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR210PBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 200V, 2.6A, 1.5R RdsOn, DPAK Product overview: IRFR210PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 2.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR210PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210PBF - 1047027-IRFR210PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210PBF
1047027-IRFR210PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210PBF 1047027-IRFR210PBF
Manufacturer: Vishay Win Source Part Number: 1047027-IRFR210PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 140pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1047027-IRFR210PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 140pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFR210PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR210PBF-ND
Single FETs, MOSFETs IRFR210PBF-ND
N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V - 70078958 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V
70078958
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V 70078958
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V

Supplier's Site
Mosfet, N-Ch, 200V, 2.6A, 150Deg C, 25W; Channel Type Vishay - 38K2607 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 2.6A, 150Deg C, 25W; Channel Type Vishay
38K2607
Mosfet, N-Ch, 200V, 2.6A, 150Deg C, 25W; Channel Type Vishay 38K2607
MOSFET, N-CH, 200V, 2.6A, 150DEG C, 25W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 200V, 2.6A, 150DEG C, 25W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR210PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR210PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR210PBF
MOSFET N-CH 200V 2.6A DPAK

MOSFET N-CH 200V 2.6A DPAK

Supplier's Site

Technical Specifications

  RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Allied Electronics, Inc. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1808713 278-IRFR210PBF 1047027-IRFR210PBF IRFR210PBF-ND 70078958 38K2607 IRFR210PBF
Product Name MOSFETs N-Channel 200V 2.6A DPAK MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210PBF Single FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V Mosfet, N-Ch, 200V, 2.6A, 150Deg C, 25W; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
PD 2500 milliwatts 2500 to 25000 milliwatts 25000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F)
V(BR)DSS 200 volts 200 volts
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252AA TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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