Vishay Intertechnology, Inc. FETs - Single - IRFR1N60A IRFR1N60A

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187870-IRFR1N60A Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D-Pak Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 36W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 75 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 1.4A Rds On (Maximum) at Id, Vgs: 7Ohm at 840mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 229pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187870-IRFR1N60A Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D-Pak Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 36W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 75 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 1.4A Rds On (Maximum) at Id, Vgs: 7Ohm at 840mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 229pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFR1N60A - 1187870-IRFR1N60A - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFR1N60A
1187870-IRFR1N60A
FETs - Single - IRFR1N60A 1187870-IRFR1N60A
Manufacturer: Vishay Siliconix Win Source Part Number: 1187870-IRFR1N60A Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D-Pak Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 36W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 75 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 1.4A Rds On (Maximum) at Id, Vgs: 7Ohm at 840mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 229pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187870-IRFR1N60A
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 36W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 75
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 1.4A
Rds On (Maximum) at Id, Vgs: 7Ohm at 840mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 229pF at 25V

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Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR1N60A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors RF Transistors
Product Number 1187870-IRFR1N60A IRFR1N60A-ND IRFR1N60A
Product Name FETs - Single - IRFR1N60A Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
QG 14 nC
PD 36000 milliwatts
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