Vishay Intertechnology, Inc. FETs - Single - IRFR110TRL IRFR110TRL

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187858-IRFR110TRL Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D-Pak Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.vishay.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 2.5W, 25W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 4.3A Rds On (Maximum) at Id, Vgs: 540mOhm at 2.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.3nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 25V
  • FETs - Single - IRFR110TRL - 1187858-IRFR110TRL - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFR110TRL-ND - DigiKey
    DigiKey
  • Integrated Circuits (ICs) - Transistors - MOSFETs - IRFR110TRL - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187858-IRFR110TRL Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D-Pak Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.vishay.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 2.5W, 25W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 4.3A Rds On (Maximum) at Id, Vgs: 540mOhm at 2.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.3nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFR110TRL - 1187858-IRFR110TRL - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFR110TRL
1187858-IRFR110TRL
FETs - Single - IRFR110TRL 1187858-IRFR110TRL
Manufacturer: Vishay Siliconix Win Source Part Number: 1187858-IRFR110TRL Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D-Pak Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.vishay.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 2.5W, 25W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 4.3A Rds On (Maximum) at Id, Vgs: 540mOhm at 2.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.3nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187858-IRFR110TRL
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.vishay.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 2.5W, 25W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 4.3A
Rds On (Maximum) at Id, Vgs: 540mOhm at 2.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.3nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 25V

Buy Now
Single FETs, MOSFETs - IRFR110TRL-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR110TRL-ND
Single FETs, MOSFETs IRFR110TRL-ND
N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

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Buy Now Datasheet
Integrated Circuits (ICs) - Transistors - MOSFETs - IRFR110TRL - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - MOSFETs
IRFR110TRL
Integrated Circuits (ICs) - Transistors - MOSFETs IRFR110TRL
Integrated Circuits (ICs) - Transistors - MOSFETs

Integrated Circuits (ICs) - Transistors - MOSFETs

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors RF Transistors
Product Number 1187858-IRFR110TRL IRFR110TRL-ND IRFR110TRL
Product Name FETs - Single - IRFR110TRL Single FETs, MOSFETs Integrated Circuits (ICs) - Transistors - MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts
QG 8.3 nC
PD 2500 to 25000 milliwatts
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