Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR014PBF IRFR014PBF

Description
Manufacturer: Vishay Win Source Part Number: 1047005-IRFR014PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 4.6A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR014PBF - 1047005-IRFR014PBF - Win Source Electronics
    Win Source Electronics
  • Transistor - 16341833 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - IRFR014PBF-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 60V, 7.7A, To-252; Transistor Polarity Vishay - 38K2596 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR014PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 60V 7.7A DPAK - 880-IRFR014PBF - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1047005-IRFR014PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 4.6A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR014PBF - 1047005-IRFR014PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR014PBF
1047005-IRFR014PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR014PBF 1047005-IRFR014PBF
Manufacturer: Vishay Win Source Part Number: 1047005-IRFR014PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 4.6A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1047005-IRFR014PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 4.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Transistor - 16341833 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16341833
Transistor 16341833
POWER FIELD-EFFECT TRANSISTOR, 7.7A I(D), 60V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA, DPAK-3. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 7.7A I(D), 60V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA, DPAK-3. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRFR014PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR014PBF-ND
Single FETs, MOSFETs IRFR014PBF-ND
N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Mosfet, N-Ch, 60V, 7.7A, To-252; Transistor Polarity Vishay - 38K2596 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 7.7A, To-252; Transistor Polarity Vishay
38K2596
Mosfet, N-Ch, 60V, 7.7A, To-252; Transistor Polarity Vishay 38K2596
MOSFET, N-CH, 60V, 7.7A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.7A; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, N-CH, 60V, 7.7A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.7A; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFR014PBF
MOSFET IRFR014PBF
MOSFET N-CH 60V HEXFET MOSFET D-PAK

MOSFET N-CH 60V HEXFET MOSFET D-PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR014PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR014PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR014PBF
MOSFET N-CH 60V 7.7A DPAK

MOSFET N-CH 60V 7.7A DPAK

Supplier's Site
MOSFET N-CH 60V 7.7A DPAK - 880-IRFR014PBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 60V 7.7A DPAK
880-IRFR014PBF
MOSFET N-CH 60V 7.7A DPAK 880-IRFR014PBF
MOSFET N-CH 60V 7.7A DPAK

MOSFET N-CH 60V 7.7A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Radwell International DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047005-IRFR014PBF 16341833 IRFR014PBF-ND 38K2596 IRFR014PBF IRFR014PBF 880-IRFR014PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR014PBF Transistor Single FETs, MOSFETs Mosfet, N-Ch, 60V, 7.7A, To-252; Transistor Polarity Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 60V 7.7A DPAK
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 2500 to 25000 milliwatts 25000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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