Manufacturer: Vishay
Win Source Part Number: 1047005-IRFR014PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 4.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
N-Channel MOSFET, 60V, 7.7A, 200mR, DPAK, Surface Mount Product overview: IRFR014PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 60V, 7.7A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 7.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR014PBF can be used for catalog matching and distributor lookup.
N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
MOSFET N-CH 60V 7.7A DPAK
MOSFET N-CH 60V HEXFET MOSFET D-PAK
MOSFET, N-CH, 60V, 7.7A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.7A; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3Pins RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 7.7A I(D), 60V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA, DPAK-3. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 60V 7.7A DPAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 1047005-IRFR014PBF | 278-IRFR014PBF | IRFR014PBF-ND | 880-IRFR014PBF | IRFR014PBF | 38K2596 | 16341833 | IRFR014PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR014PBF | N-Channel SMD 60V 7.7A MOSFET Transistor | Single FETs, MOSFETs | MOSFET N-CH 60V 7.7A DPAK | MOSFET | Mosfet, N-Ch, 60V, 7.7A, To-252; Transistor Polarity Vishay | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 2500 to 25000 milliwatts | 2500 milliwatts | 25000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; TO-252 (DPAK); D-Pak | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
