Vishay Intertechnology, Inc. FETs - Single - IRFPS37N50A IRFPS37N50A

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187833-IRFPS37N50A Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SUPER-247 (TO-274AA) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-274AA Power Dissipation (Maximum): 446W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 36A Rds On (Maximum) at Id, Vgs: 130mOhm at 22A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 5579pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187833-IRFPS37N50A Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SUPER-247 (TO-274AA) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-274AA Power Dissipation (Maximum): 446W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 36A Rds On (Maximum) at Id, Vgs: 130mOhm at 22A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 5579pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFPS37N50A - 1187833-IRFPS37N50A - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFPS37N50A
1187833-IRFPS37N50A
FETs - Single - IRFPS37N50A 1187833-IRFPS37N50A
Manufacturer: Vishay Siliconix Win Source Part Number: 1187833-IRFPS37N50A Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SUPER-247 (TO-274AA) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-274AA Power Dissipation (Maximum): 446W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 36A Rds On (Maximum) at Id, Vgs: 130mOhm at 22A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 5579pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187833-IRFPS37N50A
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SUPER-247 (TO-274AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-274AA
Power Dissipation (Maximum): 446W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 36A
Rds On (Maximum) at Id, Vgs: 130mOhm at 22A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 5579pF at 25V

Buy Now Datasheet
Single FETs, MOSFETs - IRFPS37N50A - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFPS37N50A
Single FETs, MOSFETs IRFPS37N50A
MOSFET N-CH 500V 36A SUPER247

MOSFET N-CH 500V 36A SUPER247

Supplier's Site Datasheet
Transistor - 32485804 - Radwell International
Willingboro, NJ, United States
Transistor
32485804
Transistor 32485804
POWER FIELD-EFFECT TRANSISTOR, 36A, 500V, 0.13OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 36A, 500V, 0.13OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Transistor -  - Radwell International
Willingboro, NJ, United States
Transistor
Transistor
VISHAY Semiconductors IRFPS37N50A

VISHAY Semiconductors IRFPS37N50A

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Radwell International
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187833-IRFPS37N50A IRFPS37N50A 32485804
Product Name FETs - Single - IRFPS37N50A Single FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel; N-Channel
V(BR)DSS 500 volts 500 volts
QG 180 nC
PD 446000 milliwatts 446000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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