Vishay Intertechnology, Inc. FETs - Single - IRFPG50 IRFPG50

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187830-IRFPG50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1000V Id - Continuous Drain Current: 6.1A Rds On (Maximum) at Id, Vgs: 2Ohm at 3.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 190nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2800pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187830-IRFPG50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1000V Id - Continuous Drain Current: 6.1A Rds On (Maximum) at Id, Vgs: 2Ohm at 3.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 190nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2800pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFPG50 - 1187830-IRFPG50 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFPG50
1187830-IRFPG50
FETs - Single - IRFPG50 1187830-IRFPG50
Manufacturer: Vishay Siliconix Win Source Part Number: 1187830-IRFPG50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1000V Id - Continuous Drain Current: 6.1A Rds On (Maximum) at Id, Vgs: 2Ohm at 3.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 190nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2800pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187830-IRFPG50
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1000V
Id - Continuous Drain Current: 6.1A
Rds On (Maximum) at Id, Vgs: 2Ohm at 3.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 190nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2800pF at 25V

Buy Now
Single FETs, MOSFETs - IRFPG50-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFPG50-ND
Single FETs, MOSFETs IRFPG50-ND
N-Channel 1000V 6.1A (Tc) 190W (Tc) Through Hole TO-247AC

N-Channel 1000V 6.1A (Tc) 190W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Singapore
1000V 6.1A MOSFET Transistor
278-IRFPG50
1000V 6.1A MOSFET Transistor 278-IRFPG50
MOSFET N-CH 1000V 6.1A TO247-3 Product overview: IRFPG50 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 6.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 6.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFPG50 can be used for catalog matching and distributor lookup.

MOSFET N-CH 1000V 6.1A TO247-3 Product overview: IRFPG50 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 6.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 6.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFPG50 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFPG50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFPG50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFPG50
MOSFET N-CH 1000V 6.1A TO247-3

MOSFET N-CH 1000V 6.1A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187830-IRFPG50 IRFPG50-ND 278-IRFPG50 IRFPG50
Product Name FETs - Single - IRFPG50 Single FETs, MOSFETs 1000V 6.1A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 1000 volts
QG 190 nC
PD 190000 milliwatts 190000 milliwatts
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