Vishay Intertechnology, Inc. FETs - Single - IRFPG30 IRFPG30

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187828-IRFPG30 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 125W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1000V Id - Continuous Drain Current: 3.1A Rds On (Maximum) at Id, Vgs: 5Ohm at 1.9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 80nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 980pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187828-IRFPG30 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 125W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1000V Id - Continuous Drain Current: 3.1A Rds On (Maximum) at Id, Vgs: 5Ohm at 1.9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 80nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 980pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFPG30 - 1187828-IRFPG30 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFPG30
1187828-IRFPG30
FETs - Single - IRFPG30 1187828-IRFPG30
Manufacturer: Vishay Siliconix Win Source Part Number: 1187828-IRFPG30 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 125W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1000V Id - Continuous Drain Current: 3.1A Rds On (Maximum) at Id, Vgs: 5Ohm at 1.9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 80nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 980pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187828-IRFPG30
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 125W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1000V
Id - Continuous Drain Current: 3.1A
Rds On (Maximum) at Id, Vgs: 5Ohm at 1.9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 80nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 980pF at 25V

Buy Now
Single FETs, MOSFETs - IRFPG30-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFPG30-ND
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N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-247AC

N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFPG30 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFPG30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFPG30
MOSFET N-CH 1000V 3.1A TO247-3

MOSFET N-CH 1000V 3.1A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors RF Transistors
Product Number 1187828-IRFPG30 IRFPG30-ND IRFPG30
Product Name FETs - Single - IRFPG30 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 1000 volts
QG 80 nC
PD 125000 milliwatts
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