Manufacturer: Vishay
Win Source Part Number: 017646-IRFPF50PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 6.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 2900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 4A, 10V
Alternative Parts (Cross-Reference): IXFH7N90Q; IRFPF50; 2SK2676;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
N-Channel 900V 6.7A (Tc) 190W (Tc) Through Hole TO-247AC
900V N-Channel MOSFET, 6.7A, 1.6R, TO-247AC Product overview: IRFPF50PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 6.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 6.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFPF50PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 900V 6.7A TO247-3
MOSFET RECOMMENDED ALT 844-IRFPF50
MOSFET, N-CHANNEL POLARITY, 900V DRAIN SOURCE VOLTAGE, 6.7A CONTINUOUS DRAIN CURRENT, 1.6OHM ON RESISTANCE, 10V RDS(ON) TEST VOLTAGE, TO-247 CASE STYLE, 3 PIN, ROHS COMPLIANT, THROUGH HOLE MOUNTED. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 900V, 6.7A TO-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:6.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
Power MOSFET, N Channel, 6.7 A, 900 V, 1.6 ohm, 10 V, 4 V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | 017646-IRFPF50PBF | IRFPF50PBF-ND | 278-IRFPF50PBF | IRFPF50PBF | IRFPF50PBF | 16347545 | 63J6820 | 97K2027 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPF50PBF | Single FETs, MOSFETs | N-Channel 900V 6.7A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor | N Channel Mosfet, 900V, 6.7A To-247; Channel Type Vishay | Power Mosfet, N Channel, 6.7 A, 900 V, 1.6 Ohm, 10 V, 4 V Rohs Compliant Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 900 volts | |||||||
| PD | 190000 milliwatts | 190000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
