Vishay Intertechnology, Inc. N-Channel 900V 6.7A MOSFET Transistor IRFPF50

900V 6.7A N-Channel MOSFET TO-247-3 Product overview: IRFPF50 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 6.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 6.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFPF50 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187827-IRFPF50
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: IRFPF50
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 190W
Alternative Parts (Cross-Reference): STW7NC90Z; IXFH10N100QSN; IXTH6N90; IXFH6N90SN; IXFH7N90Q; IRFPF50PBF; IRFPF50; 2SK2676;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 900V
Id - Continuous Drain Current: 6.7A
Rds On (Maximum) at Id, Vgs: 1.6Ohm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2900pF at 25V