Vishay Intertechnology, Inc. FETs - Single - IRFPF50 IRFPF50

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187827-IRFPF50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Family Name: IRFPF50 Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Alternative Parts (Cross-Reference): STW7NC90Z; IXFH10N100QSN; IXTH6N90; IXFH6N90SN; IXFH7N90Q; IRFPF50PBF; IRFPF50; 2SK2676; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 900V Id - Continuous Drain Current: 6.7A Rds On (Maximum) at Id, Vgs: 1.6Ohm at 4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2900pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187827-IRFPF50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Family Name: IRFPF50 Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Alternative Parts (Cross-Reference): STW7NC90Z; IXFH10N100QSN; IXTH6N90; IXFH6N90SN; IXFH7N90Q; IRFPF50PBF; IRFPF50; 2SK2676; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 900V Id - Continuous Drain Current: 6.7A Rds On (Maximum) at Id, Vgs: 1.6Ohm at 4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2900pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFPF50 - 1187827-IRFPF50 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFPF50
1187827-IRFPF50
FETs - Single - IRFPF50 1187827-IRFPF50
Manufacturer: Vishay Siliconix Win Source Part Number: 1187827-IRFPF50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Family Name: IRFPF50 Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Alternative Parts (Cross-Reference): STW7NC90Z; IXFH10N100QSN; IXTH6N90; IXFH6N90SN; IXFH7N90Q; IRFPF50PBF; IRFPF50; 2SK2676; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 900V Id - Continuous Drain Current: 6.7A Rds On (Maximum) at Id, Vgs: 1.6Ohm at 4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2900pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187827-IRFPF50
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: IRFPF50
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 190W
Alternative Parts (Cross-Reference): STW7NC90Z; IXFH10N100QSN; IXTH6N90; IXFH6N90SN; IXFH7N90Q; IRFPF50PBF; IRFPF50; 2SK2676;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 900V
Id - Continuous Drain Current: 6.7A
Rds On (Maximum) at Id, Vgs: 1.6Ohm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2900pF at 25V

Buy Now Datasheet
Singapore
N-Channel 900V 6.7A MOSFET Transistor
278-IRFPF50
N-Channel 900V 6.7A MOSFET Transistor 278-IRFPF50
900V 6.7A N-Channel MOSFET TO-247-3 Product overview: IRFPF50 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 6.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 6.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFPF50 can be used for catalog matching and distributor lookup.

900V 6.7A N-Channel MOSFET TO-247-3 Product overview: IRFPF50 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 6.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 6.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFPF50 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFPF50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFPF50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFPF50
MOSFET N-CH 900V 6.7A TO247-3

MOSFET N-CH 900V 6.7A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187827-IRFPF50 278-IRFPF50 IRFPF50
Product Name FETs - Single - IRFPF50 N-Channel 900V 6.7A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 900 volts
QG 200 nC
PD 190000 milliwatts 190000 milliwatts
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