Vishay Intertechnology, Inc. 800V 7.8A MOSFET Transistor IRFPE50

MOSFET N-CH 800V 7.8A TO247-3 Product overview: IRFPE50 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 7.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 7.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFPE50 can be used for catalog matching and distributor lookup.

N-Channel 800V 7.8A (Tc) 190W (Tc) Through Hole TO-247AC

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187824-IRFPE50
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Safety
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 7.8A
Rds On (Maximum) at Id, Vgs: 1.2Ohm at 4.7A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3100pF at 25V