600V 16A N-Channel MOSFET TO-247-3 Product overview: IRFPC60PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFPC60PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 1187821-IRFPC60PBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 280W
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Manufacturer Pack Quantity: 25
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 16A
Rds On (Maximum) at Id, Vgs: 400mOhm at 9.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 210nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3900pF at 25V
N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247AC
MOSFET RECOMMENDED ALT 844-IRFPC60
MOSFET, N-CH, 600V, 16A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
N CHANNEL MOSFET, 600V, 16A, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:16A; On Resistance Rds(on):0.4ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET N-CH 600V 16A TO247-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFPC60PBF | 1187821-IRFPC60PBF | IRFPC60PBF-ND | IRFPC60PBF | 01AC4880 | 63J6814 | IRFPC60PBF |
| Product Name | N-Channel 600V 16A MOSFET Transistor | FETs - Single - IRFPC60PBF | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 16A, To-247Ac; Transistor Polarity Vishay | N Channel Mosfet, 600V, 16A, To-247; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 280000 milliwatts | 280000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 600 volts | ||||||
| QG | 210 nC |
