Vishay Intertechnology, Inc. FETs - Single - IRFPC60 IRFPC60

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187819-IRFPC60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 280W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 16A Rds On (Maximum) at Id, Vgs: 400mOhm at 9.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 210nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3900pF at 25V
  • FETs - Single - IRFPC60 - 1187819-IRFPC60 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFPC60 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 600V 16A TO-247AC - 880-IRFPC60 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187819-IRFPC60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 280W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 16A Rds On (Maximum) at Id, Vgs: 400mOhm at 9.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 210nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3900pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFPC60 - 1187819-IRFPC60 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFPC60
1187819-IRFPC60
FETs - Single - IRFPC60 1187819-IRFPC60
Manufacturer: Vishay Siliconix Win Source Part Number: 1187819-IRFPC60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 280W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 16A Rds On (Maximum) at Id, Vgs: 400mOhm at 9.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 210nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3900pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187819-IRFPC60
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 280W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 16A
Rds On (Maximum) at Id, Vgs: 400mOhm at 9.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 210nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3900pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFPC60 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFPC60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFPC60
MOSFET N-CH 600V 16A TO247-3

MOSFET N-CH 600V 16A TO247-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFPC60
MOSFET IRFPC60
MOSFET RECOMMENDED ALT 844-IRFPC60PBF

MOSFET RECOMMENDED ALT 844-IRFPC60PBF

Buy Now Datasheet
MOSFET N-CH 600V 16A TO-247AC - 880-IRFPC60 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 16A TO-247AC
880-IRFPC60
MOSFET N-CH 600V 16A TO-247AC 880-IRFPC60
MOSFET N-CH 600V 16A TO-247AC

MOSFET N-CH 600V 16A TO-247AC

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1187819-IRFPC60 IRFPC60 IRFPC60 880-IRFPC60
Product Name FETs - Single - IRFPC60 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 600V 16A TO-247AC
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
QG 210 nC
PD 280000 milliwatts 280000 milliwatts
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