Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFP448

Description
N-Channel 500V 11A (Tc) 180W (Tc) Through Hole TO-247AC
Request a Quote Datasheet
Description
N-Channel 500V 11A (Tc) 180W (Tc) Through Hole TO-247AC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFP448-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFP448-ND
Single FETs, MOSFETs IRFP448-ND
N-Channel 500V 11A (Tc) 180W (Tc) Through Hole TO-247AC

N-Channel 500V 11A (Tc) 180W (Tc) Through Hole TO-247AC

Buy Now Datasheet
FETs - Single - IRFP448 - 1187798-IRFP448 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFP448
1187798-IRFP448
FETs - Single - IRFP448 1187798-IRFP448
Manufacturer: Vishay Siliconix Win Source Part Number: 1187798-IRFP448 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 180W Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 600mOhm at 6.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 84nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1900pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187798-IRFP448
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 180W
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 11A
Rds On (Maximum) at Id, Vgs: 600mOhm at 6.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 84nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1900pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP448 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFP448
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFP448
MOSFET N-CH 500V 11A TO247-3

MOSFET N-CH 500V 11A TO247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number IRFP448-ND 1187798-IRFP448 IRFP448
Product Name Single FETs, MOSFETs FETs - Single - IRFP448 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3
V(BR)DSS 500 volts
QG 84 nC
Unlock Full Specs
to access all available technical data