Vishay Intertechnology, Inc. FETs - Single - IRFP360LC IRFP360LC

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187791-IRFP360LC Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 280W Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Commercial Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 23A Rds On (Maximum) at Id, Vgs: 200mOhm at 14A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 3400pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187791-IRFP360LC Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 280W Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Commercial Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 23A Rds On (Maximum) at Id, Vgs: 200mOhm at 14A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 3400pF at 25V
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Suppliers

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FETs - Single - IRFP360LC - 1187791-IRFP360LC - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFP360LC
1187791-IRFP360LC
FETs - Single - IRFP360LC 1187791-IRFP360LC
Manufacturer: Vishay Siliconix Win Source Part Number: 1187791-IRFP360LC Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 280W Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Commercial Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 23A Rds On (Maximum) at Id, Vgs: 200mOhm at 14A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 3400pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187791-IRFP360LC
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 280W
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Commercial
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 400V
Id - Continuous Drain Current: 23A
Rds On (Maximum) at Id, Vgs: 200mOhm at 14A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 3400pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP360LC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFP360LC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFP360LC
MOSFET N-CH 400V 23A TO247-3

MOSFET N-CH 400V 23A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET RF Transistors
Product Number 1187791-IRFP360LC IRFP360LC
Product Name FETs - Single - IRFP360LC Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 400 volts
QG 110 nC
PD 280000 milliwatts
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