N-Channel 400V 16A (Tc) 190W (Tc) Through Hole TO-247AC
POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 400V, 0.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 400V 16A TO247-3
Manufacturer: Vishay
Win Source Part Number: 017631-IRFP350PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Family Name: IRFP350
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 2600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 300 mOhm @ 9.6A, 10V
Alternative Parts (Cross-Reference): IRFS350A; IRFS350A_NL; IRFP350A_NL;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
MOSFET N-Channel 400V 16A TO247AC
MOSFET N-CH 400V 16A TO247-3
N CHANNEL MOSFET, 400V, 16A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 0.3Ohm;ID 16A;TO-247AC;PD 190W;VGS +/-20V
| DigiKey | Radwell International | ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFP350PBF-ND | 16347417 | IRFP350PBF | 017631-IRFP350PBF | 5409648 | IRFP350PBF | 63J6876 | IRFP350PBF | 70078936 |
| Product Name | Single FETs, MOSFETs | Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP350PBF | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 400V, 16A, To-247; Channel Type Vishay | MOSFET | MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 0.3Ohm;ID 16A;TO-247AC;PD 190W;VGS +/-20V |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; TO-247AC | TO-247; TO-247-3 | TO-3; TO-247 | TO-247 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 400 volts | 400 volts | 400 volts | 400 volts | |||||
| IDSS | 16000 milliamps | 16000 milliamps | 16000 milliamps |
