Vishay Intertechnology, Inc. Electronic Surplus - IRFP350 IRFP350

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187787-IRFP350 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.samsung.com/Prod ucts/Semiconductor Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Commercial Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 16A Rds On (Maximum) at Id, Vgs: 300mOhm at 9.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 150nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2600pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187787-IRFP350 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.samsung.com/Prod ucts/Semiconductor Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Commercial Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 16A Rds On (Maximum) at Id, Vgs: 300mOhm at 9.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 150nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2600pF at 25V
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Suppliers

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Product
Description
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Electronic Surplus - IRFP350 - 1187787-IRFP350 - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IRFP350
1187787-IRFP350
Electronic Surplus - IRFP350 1187787-IRFP350
Manufacturer: Vishay Siliconix Win Source Part Number: 1187787-IRFP350 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.samsung.com/Prod ucts/Semiconductor Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Commercial Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 16A Rds On (Maximum) at Id, Vgs: 300mOhm at 9.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 150nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2600pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187787-IRFP350
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.samsung.com/Products/Semiconductor
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Commercial
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 400V
Id - Continuous Drain Current: 16A
Rds On (Maximum) at Id, Vgs: 300mOhm at 9.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 150nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2600pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP350 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFP350
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFP350
MOSFET N-CH 400V 16A TO247-3

MOSFET N-CH 400V 16A TO247-3

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET RF Transistors
Product Number 1187787-IRFP350 IRFP350
Product Name Electronic Surplus - IRFP350 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 400 volts
QG 150 nC
PD 190000 milliwatts
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