The IRFP250PbF is a third-generation N-channel MOSFET in a TO-247AC package with an isolated central mounting hole, designed for high-power switching applications. It has a drain-source voltage rating of 200 V, a continuous drain current of 30 A at 25 °C, and a maximum on-state resistance of 0.085 Ω at a gate-source voltage of 10 V. The device is rated for repetitive avalanche current up to 30 A and single pulse avalanche energy of 410 mJ. It features fast switching, low gate charge, and is compliant with RoHS Directive 2002/95/EC. The maximum power dissipation is 190 W at 25 °C, with a junction-to-case thermal resistance of 0.65 °C/W. The operating junction and storage temperature range is -55 °C to +150 °C.
N CHANNEL MOSFET, 200V, 30A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC0521 |
| Product Name | N Channel Mosfet, 200V, 30A, To-247; Channel Type Vishay |
| Polarity | N-Channel |