MOSFET N-CH 200V 20A TO247-3
N-Channel 200V 20A (Tc) 150W (Tc) Through Hole TO-247AC
N-Channel MOSFET, 200V, 20A, 180mR, TO-247AC Product overview: IRFP240PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP240PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 017627-IRFP240PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Family Name: IRFP240
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): IRFP240; IRFS240B_FP001; IRFS240B;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
200V 20A 150W 180mΩ@10V,12A 4V@250uA N Channel TO-247AC-3 MOSFETs ROHS
MOSFET N-CH 200V 20A TO247-3
N CHANNEL MOSFET, 200V, 20A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 20 A, 200 V, 180 mohm, 10 V, 4 V RoHS Compliant: Yes
N CHANNEL MOSFET, 200V, 20A, TO-247, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:200V, CONTINUOUS DRAIN CURRENT ID:20A, ON RESISTANCE RDS(ON):0.18OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 20A;TO-247AC;PD 150W;VGS +/-20V
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFP240PBF | IRFP240PBF-ND | 278-IRFP240PBF | 017627-IRFP240PBF | IRFP240PBF | IRFP240PBF | IRFP240PBF | 63J6857 | 59M7468 | 16347353 | 70078927 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 200V 20A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP240PBF | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 200V, 20A, To-247; Channel Type Vishay | Mosfet Transistor, N Channel, 20 A, 200 V, 180 Mohm, 10 V, 4 V Rohs Compliant Vishay | Transistor | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 20A;TO-247AC;PD 150W;VGS +/-20V |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | |||||||
| IDSS | 20000 milliamps | 20000 milliamps | |||||||||
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts |
