Vishay Intertechnology, Inc. FETs - Single - IRFP150 IRFP150

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187760-IRFP150 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 230W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 41A Rds On (Maximum) at Id, Vgs: 55mOhm at 25A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2800pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187760-IRFP150 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 230W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 41A Rds On (Maximum) at Id, Vgs: 55mOhm at 25A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2800pF at 25V
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FETs - Single - IRFP150 - 1187760-IRFP150 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFP150
1187760-IRFP150
FETs - Single - IRFP150 1187760-IRFP150
Manufacturer: Vishay Siliconix Win Source Part Number: 1187760-IRFP150 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 230W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 41A Rds On (Maximum) at Id, Vgs: 55mOhm at 25A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2800pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187760-IRFP150
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 230W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 41A
Rds On (Maximum) at Id, Vgs: 55mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2800pF at 25V

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Technical Specifications

  Win Source Electronics
Product Category Power MOSFET
Product Number 1187760-IRFP150
Product Name FETs - Single - IRFP150
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
QG 140 nC
PD 230000 milliwatts
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