Vishay Intertechnology, Inc. FETs - Single - IRFL210PBF IRFL210PBF

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187723-IRFL210PBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 2W, 3.1W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 4,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 960mA Rds On (Maximum) at Id, Vgs: 1.5Ohm at 580mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V
Request a Quote Datasheet
Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187723-IRFL210PBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 2W, 3.1W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 4,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 960mA Rds On (Maximum) at Id, Vgs: 1.5Ohm at 580mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFL210PBF - 1187723-IRFL210PBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFL210PBF
1187723-IRFL210PBF
FETs - Single - IRFL210PBF 1187723-IRFL210PBF
Manufacturer: Vishay Siliconix Win Source Part Number: 1187723-IRFL210PBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 2W, 3.1W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 4,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 960mA Rds On (Maximum) at Id, Vgs: 1.5Ohm at 580mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187723-IRFL210PBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-261-4, TO-261AA
Power Dissipation (Maximum): 2W, 3.1W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 4,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 960mA
Rds On (Maximum) at Id, Vgs: 1.5Ohm at 580mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V

Buy Now
Single FETs, MOSFETs - IRFL210PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFL210PBF-ND
Single FETs, MOSFETs IRFL210PBF-ND
N-Channel 200V 960mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

N-Channel 200V 960mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL210PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFL210PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFL210PBF
MOSFET N-CH 200V 960MA SOT223

MOSFET N-CH 200V 960MA SOT223

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors RF Transistors
Product Number 1187723-IRFL210PBF IRFL210PBF-ND IRFL210PBF
Product Name FETs - Single - IRFL210PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
QG 8.2 nC
PD 2000 to 3100 milliwatts
Unlock Full Specs
to access all available technical data