Vishay Intertechnology, Inc. FETs - Single - IRFL110PBF IRFL110PBF

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187720-IRFL110PBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 2W, 3.1W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 4,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 1.5A Rds On (Maximum) at Id, Vgs: 540mOhm at 900mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.3nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 25V
  • FETs - Single - IRFL110PBF - 1187720-IRFL110PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFL110PBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL110PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 16347261 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - IRFL110PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187720-IRFL110PBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 2W, 3.1W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 4,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 1.5A Rds On (Maximum) at Id, Vgs: 540mOhm at 900mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.3nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFL110PBF - 1187720-IRFL110PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFL110PBF
1187720-IRFL110PBF
FETs - Single - IRFL110PBF 1187720-IRFL110PBF
Manufacturer: Vishay Siliconix Win Source Part Number: 1187720-IRFL110PBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 2W, 3.1W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 4,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 1.5A Rds On (Maximum) at Id, Vgs: 540mOhm at 900mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.3nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187720-IRFL110PBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-261-4, TO-261AA
Power Dissipation (Maximum): 2W, 3.1W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 4,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 1.5A
Rds On (Maximum) at Id, Vgs: 540mOhm at 900mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.3nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 25V

Buy Now
ERSAELECTRONICS PTE. LTD.
Singapore
100V 1.5A MOSFET Transistor
278-IRFL110PBF
100V 1.5A MOSFET Transistor 278-IRFL110PBF
MOSFET N-CH 100V 1.5A SOT223 Product overview: IRFL110PBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL110PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 1.5A SOT223 Product overview: IRFL110PBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL110PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFL110PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFL110PBF-ND
Single FETs, MOSFETs IRFL110PBF-ND
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL110PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFL110PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFL110PBF
MOSFET N-CH 100V 1.5A SOT223

MOSFET N-CH 100V 1.5A SOT223

Supplier's Site
Transistor - 16347261 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16347261
Transistor 16347261
POWER FIELD-EFFECT TRANSISTOR, 1.5A I(D), 100V, 0.54OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-261AA, FB MARKING. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 1.5A I(D), 100V, 0.54OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-261AA, FB MARKING. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRFL110PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFL110PBF
Single FETs, MOSFETs IRFL110PBF
MOSFET N-CH 100V 1.5A SOT223

MOSFET N-CH 100V 1.5A SOT223

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Radwell International ODG (Origin Data Global)
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1187720-IRFL110PBF 278-IRFL110PBF IRFL110PBF-ND IRFL110PBF 16347261 IRFL110PBF
Product Name FETs - Single - IRFL110PBF 100V 1.5A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 100 volts 100 volts
QG 8.3 nC
PD 2000 to 3100 milliwatts 2000 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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