MOSFET N-CH 100V 1.5A SOT223 Product overview: IRFL110PBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL110PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 1187720-IRFL110PBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-261-4, TO-261AA
Power Dissipation (Maximum): 2W, 3.1W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 4,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 1.5A
Rds On (Maximum) at Id, Vgs: 540mOhm at 900mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.3nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 25V
MOSFET N-CH 100V 1.5A SOT223
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
POWER FIELD-EFFECT TRANSISTOR, 1.5A I(D), 100V, 0.54OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-261AA, FB MARKING. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 1.5A SOT223
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors |
| Product Number | 278-IRFL110PBF | 1187720-IRFL110PBF | IRFL110PBF | IRFL110PBF-ND | 16347261 | IRFL110PBF |
| Product Name | 100V 1.5A MOSFET Transistor | FETs - Single - IRFL110PBF | Single FETs, MOSFETs | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 2000 milliwatts | 2000 to 3100 milliwatts | 2000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tube | SOT3 | SOT223; TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | TO-261-4, TO-261AA | |
| Packing Method | Tube | Tube; Tube | Tube; Tube | |||
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel |
