Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFIBE30G

Description
N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFIBE30G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFIBE30G-ND
Single FETs, MOSFETs IRFIBE30G-ND
N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3

N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
800V 2.1A TO220 MOSFET Transistor
278-IRFIBE30G
800V 2.1A TO220 MOSFET Transistor 278-IRFIBE30G
MOSFET N-CH 800V 2.1A TO220-3 Product overview: IRFIBE30G from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2.1A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2.1A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIBE30G can be used for catalog matching and distributor lookup.

MOSFET N-CH 800V 2.1A TO220-3 Product overview: IRFIBE30G from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2.1A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2.1A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIBE30G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FETs - Single - IRFIBE30G - 1187697-IRFIBE30G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFIBE30G
1187697-IRFIBE30G
FETs - Single - IRFIBE30G 1187697-IRFIBE30G
Manufacturer: Vishay Siliconix Win Source Part Number: 1187697-IRFIBE30G Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 35W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 800V Id - Continuous Drain Current: 2.1A Rds On (Maximum) at Id, Vgs: 3Ohm at 1.3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 78nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187697-IRFIBE30G
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 35W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 2.1A
Rds On (Maximum) at Id, Vgs: 3Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 78nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V

Buy Now
MOSFET N-CH 800V 2.1A TO220FP - 880-IRFIBE30G - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 800V 2.1A TO220FP
880-IRFIBE30G
MOSFET N-CH 800V 2.1A TO220FP 880-IRFIBE30G
MOSFET N-CH 800V 2.1A TO220FP

MOSFET N-CH 800V 2.1A TO220FP

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIBE30G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIBE30G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIBE30G
MOSFET N-CH 800V 2.1A TO220-3

MOSFET N-CH 800V 2.1A TO220-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFIBE30G-ND 278-IRFIBE30G 1187697-IRFIBE30G 880-IRFIBE30G IRFIBE30G
Product Name Single FETs, MOSFETs 800V 2.1A TO220 MOSFET Transistor FETs - Single - IRFIBE30G MOSFET N-CH 800V 2.1A TO220FP Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab Tube TO-220; SOT3 TO-220; TO-220-3 Full Pack, Isolated Tab
PD 35000 milliwatts 35000 milliwatts 35000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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