N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3
Manufacturer: Vishay Siliconix
Win Source Part Number: 1187697-IRFIBE30G
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 35W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 2.1A
Rds On (Maximum) at Id, Vgs: 3Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 78nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V
MOSFET N-CH 800V 2.1A TO220FP
MOSFET N-CH 800V 2.1A TO220-3
| DigiKey | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFIBE30G-ND | 1187697-IRFIBE30G | 880-IRFIBE30G | IRFIBE30G |
| Product Name | Single FETs, MOSFETs | FETs - Single - IRFIBE30G | MOSFET N-CH 800V 2.1A TO220FP | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-220; TO-220-3 Full Pack, Isolated Tab | TO-220; SOT3 | TO-220; TO-220-3 Full Pack, Isolated Tab | |
| V(BR)DSS | 800 volts | |||
| QG | 78 nC |
