Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBC30GPBF IRFIBC30GPBF

Description
Manufacturer: Vishay Win Source Part Number: 124518-IRFIBC30GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 660pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 124518-IRFIBC30GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 660pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBC30GPBF - 124518-IRFIBC30GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBC30GPBF
124518-IRFIBC30GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBC30GPBF 124518-IRFIBC30GPBF
Manufacturer: Vishay Win Source Part Number: 124518-IRFIBC30GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 660pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 124518-IRFIBC30GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 660pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
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N-Channel 600V 2.5A (Tc) 35W (Tc) Through Hole TO-220-3

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIBC30GPBF - Shenzhen Shengyu Electronics Technology Limited
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIBC30GPBF
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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 124518-IRFIBC30GPBF IRFIBC30GPBF-ND IRFIBC30GPBF IRFIBC30GPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBC30GPBF Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 35000 milliwatts
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