500V N-Channel MOSFET, 6.6A, 520mR, TO-220 Product overview: IRFIB7N50APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 6.6A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 6.6A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIB7N50APBF can be used for catalog matching and distributor lookup.
MOSFET N-Channel 500V 6.6A TO220FP
MOSFET N-Channel 500V 6.6A TO220FP
MOSFET N-Channel 500V 6.6A TO220FP
N-Channel 500V 6.6A (Tc) 60W (Tc) Through Hole TO-220-3
Manufacturer: Vishay
Win Source Part Number: 017611-IRFIB7N50APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 6.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 1423pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 520 mOhm @ 4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 500V, 6.6A, TO-220FP ROHS COMPLIANT: YES
MOSFET N-CH 500V HEXFET MOSFET
MOSFET N-CH 500V 6.6A TO220-3
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.52Ohm;ID 6.6A;TO-220 Full-Pak;PD 60W
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFIB7N50APBF | 5411966 | 5411966P | IRFIB7N50APBF-ND | 017611-IRFIB7N50APBF | 56AJ9870 | IRFIB7N50APBF | IRFIB7N50APBF | 70078913 |
| Product Name | N-Channel 500V 6.6A TO-220 MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB7N50APBF | Mosfet, N-Ch, 500V, 6.6A, To-220Fp Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.52Ohm;ID 6.6A;TO-220 Full-Pak;PD 60W |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 60000 milliwatts | 60000 milliwatts | 60000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||||
| MOSFET Operating Mode | Enhancement | ||||||||
| Package Type | TO-220; To-220fp | TO-220; TO-220FP | TO-220; TO-220-3 Full Pack, Isolated Tab | TO-220; SOT3; TO-220-3 | TO-3; TO-220 | TO-220; TO-220-3 Full Pack, Isolated Tab | TO-220 |
