Vishay Intertechnology, Inc. FETs - Single - IRFIB6N60A IRFIB6N60A

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187688-IRFIB6N60A Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 60W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 5.5A Rds On (Maximum) at Id, Vgs: 750mOhm at 3.3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 49nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187688-IRFIB6N60A Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 60W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 5.5A Rds On (Maximum) at Id, Vgs: 750mOhm at 3.3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 49nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFIB6N60A - 1187688-IRFIB6N60A - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFIB6N60A
1187688-IRFIB6N60A
FETs - Single - IRFIB6N60A 1187688-IRFIB6N60A
Manufacturer: Vishay Siliconix Win Source Part Number: 1187688-IRFIB6N60A Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 60W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 5.5A Rds On (Maximum) at Id, Vgs: 750mOhm at 3.3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 49nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187688-IRFIB6N60A
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 60W
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 5.5A
Rds On (Maximum) at Id, Vgs: 750mOhm at 3.3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 49nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 25V

Buy Now
Singapore
600V 5.5A TO220 MOSFET Transistor
278-IRFIB6N60A
600V 5.5A TO220 MOSFET Transistor 278-IRFIB6N60A
MOSFET N-CH 600V 5.5A TO220-3 Product overview: IRFIB6N60A from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 5.5A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 5.5A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIB6N60A can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 5.5A TO220-3 Product overview: IRFIB6N60A from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 5.5A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 5.5A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIB6N60A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFIB6N60A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFIB6N60A-ND
Single FETs, MOSFETs IRFIB6N60A-ND
N-Channel 600V 5.5A (Tc) 60W (Tc) Through Hole TO-220-3

N-Channel 600V 5.5A (Tc) 60W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIB6N60A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIB6N60A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIB6N60A
MOSFET N-CH 600V 5.5A TO220-3

MOSFET N-CH 600V 5.5A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1187688-IRFIB6N60A 278-IRFIB6N60A IRFIB6N60A-ND IRFIB6N60A
Product Name FETs - Single - IRFIB6N60A 600V 5.5A TO220 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
QG 49 nC
PD 60000 milliwatts 60000 milliwatts
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