Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFIB5N65A

Description
N-Channel 650V 5.1A (Tc) 60W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 650V 5.1A (Tc) 60W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFIB5N65A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFIB5N65A-ND
Single FETs, MOSFETs IRFIB5N65A-ND
N-Channel 650V 5.1A (Tc) 60W (Tc) Through Hole TO-220-3

N-Channel 650V 5.1A (Tc) 60W (Tc) Through Hole TO-220-3

Buy Now Datasheet
FETs - Single - IRFIB5N65A - 1187687-IRFIB5N65A - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFIB5N65A
1187687-IRFIB5N65A
FETs - Single - IRFIB5N65A 1187687-IRFIB5N65A
Manufacturer: Vishay Siliconix Win Source Part Number: 1187687-IRFIB5N65A Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 60W Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 5.1A Rds On (Maximum) at Id, Vgs: 930mOhm at 3.1A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 48nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1417pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187687-IRFIB5N65A
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 60W
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 5.1A
Rds On (Maximum) at Id, Vgs: 930mOhm at 3.1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 48nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1417pF at 25V

Buy Now
Singapore
650V 5.1A TO220 MOSFET Transistor
278-IRFIB5N65A
650V 5.1A TO220 MOSFET Transistor 278-IRFIB5N65A
MOSFET N-CH 650V 5.1A TO220-3 Product overview: IRFIB5N65A from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 5.1A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 5.1A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIB5N65A can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 5.1A TO220-3 Product overview: IRFIB5N65A from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 5.1A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 5.1A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIB5N65A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIB5N65A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIB5N65A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIB5N65A
MOSFET N-CH 650V 5.1A TO220-3

MOSFET N-CH 650V 5.1A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFIB5N65A-ND 1187687-IRFIB5N65A 278-IRFIB5N65A IRFIB5N65A
Product Name Single FETs, MOSFETs FETs - Single - IRFIB5N65A 650V 5.1A TO220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3 Tube TO-220; TO-220-3 Full Pack, Isolated Tab
V(BR)DSS 650 volts
QG 48 nC
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