Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFI9530G

Description
P-Channel 100V 7.7A (Tc) 42W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
P-Channel 100V 7.7A (Tc) 42W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFI9530G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI9530G-ND
Single FETs, MOSFETs IRFI9530G-ND
P-Channel 100V 7.7A (Tc) 42W (Tc) Through Hole TO-220-3

P-Channel 100V 7.7A (Tc) 42W (Tc) Through Hole TO-220-3

Buy Now Datasheet
FETs - Single - IRFI9530G - 1187671-IRFI9530G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFI9530G
1187671-IRFI9530G
FETs - Single - IRFI9530G 1187671-IRFI9530G
Manufacturer: Vishay Siliconix Win Source Part Number: 1187671-IRFI9530G Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 42W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 7.7A Rds On (Maximum) at Id, Vgs: 300mOhm at 4.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 860pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187671-IRFI9530G
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 42W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 7.7A
Rds On (Maximum) at Id, Vgs: 300mOhm at 4.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 860pF at 25V

Buy Now
MOSFET P-CH 100V 7.7A TO220FP - 880-IRFI9530G - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 100V 7.7A TO220FP
880-IRFI9530G
MOSFET P-CH 100V 7.7A TO220FP 880-IRFI9530G
MOSFET P-CH 100V 7.7A TO220FP

MOSFET P-CH 100V 7.7A TO220FP

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI9530G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI9530G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI9530G
MOSFET P-CH 100V 7.7A TO220-3

MOSFET P-CH 100V 7.7A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFI9530G-ND 1187671-IRFI9530G 880-IRFI9530G IRFI9530G
Product Name Single FETs, MOSFETs FETs - Single - IRFI9530G MOSFET P-CH 100V 7.7A TO220FP Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3 TO-220; TO-220-3 Full Pack, Isolated Tab
V(BR)DSS 100 volts -100 volts
QG 38 nC
PD 42000 milliwatts 42000 milliwatts
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