500V 2.1A N-Channel MOSFET TO-220 3R Rds On Product overview: IRFI820GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 2.1A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 2.1A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI820GPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1046947-IRFI820GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 2.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 360pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
N-Channel 500V 2.1A (Tc) 30W (Tc) Through Hole TO-220-3
MOSFET RECOMMENDED ALT 844-IRFI820G
N CHANNEL MOSFET, 500V, 2.1A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:2.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 2.1 A, 500 V, 3 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 500V 2.1A TO220-3
MOSFET TRANSISTOR, N CHANNEL, 2.1 A, 500 V, 3 OHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 278-IRFI820GPBF | 1046947-IRFI820GPBF | IRFI820GPBF-ND | IRFI820GPBF | 63J6779 | 38K2533 | IRFI820GPBF | 16347097 |
| Product Name | N-Channel 500V 2.1A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI820GPBF | Single FETs, MOSFETs | MOSFET | N Channel Mosfet, 500V, 2.1A, To-220Fp; Channel Type Vishay | Mosfet Transistor, N Channel, 2.1 A, 500 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| PD | 30000 milliwatts | 30000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| V(BR)DSS | 500 volts |
