Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI640GPBF IRFI640GPBF

Description
Manufacturer: Vishay Win Source Part Number: 017608-IRFI640GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 5.9A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI640GPBF - 017608-IRFI640GPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFI640GPBF-ND - DigiKey
    DigiKey
  • Mosfet Transistor, N Channel, 9.8 A, 200 V, 180 Mohm, 10 V, 4 V Rohs Compliant Vishay - 97K2005 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Transistor - 16347065 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI640GPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 9.8A;TO-220 Full-Pak;PD 40W - 70079036 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017608-IRFI640GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 5.9A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI640GPBF - 017608-IRFI640GPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI640GPBF
017608-IRFI640GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI640GPBF 017608-IRFI640GPBF
Manufacturer: Vishay Win Source Part Number: 017608-IRFI640GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 5.9A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017608-IRFI640GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 5.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 200V 9.8A TO-220 MOSFET Transistor
278-IRFI640GPBF
N-Channel 200V 9.8A TO-220 MOSFET Transistor 278-IRFI640GPBF
200V N-Channel MOSFET, 9.8A, 180mR, TO-220 Product overview: IRFI640GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 9.8A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9.8A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI640GPBF can be used for catalog matching and distributor lookup.

200V N-Channel MOSFET, 9.8A, 180mR, TO-220 Product overview: IRFI640GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 9.8A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9.8A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI640GPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFI640GPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI640GPBF-ND
Single FETs, MOSFETs IRFI640GPBF-ND
N-Channel 200V 9.8A (Tc) 40W (Tc) Through Hole TO-220-3

N-Channel 200V 9.8A (Tc) 40W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Mosfet Transistor, N Channel, 9.8 A, 200 V, 180 Mohm, 10 V, 4 V Rohs Compliant Vishay - 97K2005 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 9.8 A, 200 V, 180 Mohm, 10 V, 4 V Rohs Compliant Vishay
97K2005
Mosfet Transistor, N Channel, 9.8 A, 200 V, 180 Mohm, 10 V, 4 V Rohs Compliant Vishay 97K2005
MOSFET Transistor, N Channel, 9.8 A, 200 V, 180 mohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 9.8 A, 200 V, 180 mohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor - 16347065 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16347065
Transistor 16347065
N CHANNEL MOSFET, 200V, 9.8 AMP, 40W, TO-220-3, ON RESISTANCE RDS(ON): 0.18OHM @ 5.9 AMP 10V, THRESHOLD VOLTAGE VGS: 4V, THROUGH HOLE, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 200V, 9.8 AMP, 40W, TO-220-3, ON RESISTANCE RDS(ON): 0.18OHM @ 5.9 AMP 10V, THRESHOLD VOLTAGE VGS: 4V, THROUGH HOLE, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFI640GPBF
MOSFET IRFI640GPBF
MOSFET N-CH 200V HEXFET MOSFET

MOSFET N-CH 200V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI640GPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI640GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI640GPBF
MOSFET N-CH 200V 9.8A TO220-3

MOSFET N-CH 200V 9.8A TO220-3

Supplier's Site
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 9.8A;TO-220 Full-Pak;PD 40W - 70079036 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 9.8A;TO-220 Full-Pak;PD 40W
70079036
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 9.8A;TO-220 Full-Pak;PD 40W 70079036
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 9.8A;TO-220 Full-Pak;PD 40W

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 9.8A;TO-220 Full-Pak;PD 40W

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017608-IRFI640GPBF 278-IRFI640GPBF IRFI640GPBF-ND 97K2005 16347065 IRFI640GPBF IRFI640GPBF 70079036
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI640GPBF N-Channel 200V 9.8A TO-220 MOSFET Transistor Single FETs, MOSFETs Mosfet Transistor, N Channel, 9.8 A, 200 V, 180 Mohm, 10 V, 4 V Rohs Compliant Vishay Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 9.8A;TO-220 Full-Pak;PD 40W
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 200 volts 200 volts
PD 40000 milliwatts 40000 milliwatts 40000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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